Evolution of Dislocation Loops in Silicon in an Inert Ambient-ii
نویسندگان
چکیده
A plan-view TEM study of the distribution, geometry and time-dependent anneal behavior of type-11 dislocation loops induced by I x 10’5/cm2, 50 keV Si+ implantation into silicon was presented in Part I of this paper. A point-defect based model representing loop-to-loop interactions (Ostwald-ripening) during annealing is developed. The variation in the size and distribution of the loops as a function of anneal time and temperature is correctly simulated as part of this modeling exercise. Other quantities of interest, such as the average radii of the loop distribution are extracted from the model and directly compared with experimental values.
منابع مشابه
Evolution of Dislocation Loops in Silicon in an Inert Ambient-i
A plan-view TEM study has been made of the distribution, geometry and the time-dependent annealing behavior of type II (end of range) dislocation loops introduced by 1 x 10’5/cm2 50 keV Si+ implantation into silicon. The size and density distributions of the loops have been quantitatively analyzed, and loop growth behavior has been compared with that predicted by a bulk-diffusion mechanism and ...
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